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The transport of 2D electrons through magnetic barriers

Identifieur interne : 000494 ( Main/Exploration ); précédent : 000493; suivant : 000495

The transport of 2D electrons through magnetic barriers

Auteurs : V. Kubrak [Royaume-Uni] ; A. W Rushforth [Royaume-Uni] ; A. C Neumann [Royaume-Uni] ; F. Rahman [Royaume-Uni, États-Unis] ; B. L Gallagher [Royaume-Uni] ; P. C Main [Royaume-Uni] ; M. Henini [Royaume-Uni] ; C. H Marrows [Royaume-Uni] ; B. J Hickey [Royaume-Uni]

Source :

RBID : ISTEX:31EBC343C1C3DA30B34AB693FC7FC0D5F7C322DB

Abstract

We have fabricated three different types of hybrid ferromagnet-semiconductor devices. In each case, the stray field from a magnetic element on the surface of the semiconductor gives rise to a different type of inhomogeneous magnetic profile at a near-surface two-dimensional electron gas (2DEG). We investigate how these different types of magnetic barriers influence the transport properties of the 2DEG. Implications for potential applications of hybrid devices for nanomagnetometry, magnetic field sensors and spin-injection devices are discussed.

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DOI: 10.1016/S1386-9477(00)00103-X


Affiliations:


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