The transport of 2D electrons through magnetic barriers
Identifieur interne : 000494 ( Main/Exploration ); précédent : 000493; suivant : 000495The transport of 2D electrons through magnetic barriers
Auteurs : V. Kubrak [Royaume-Uni] ; A. W Rushforth [Royaume-Uni] ; A. C Neumann [Royaume-Uni] ; F. Rahman [Royaume-Uni, États-Unis] ; B. L Gallagher [Royaume-Uni] ; P. C Main [Royaume-Uni] ; M. Henini [Royaume-Uni] ; C. H Marrows [Royaume-Uni] ; B. J Hickey [Royaume-Uni]Source :
- Physica E: Low-dimensional Systems and Nanostructures [ 1386-9477 ] ; 2000.
Abstract
We have fabricated three different types of hybrid ferromagnet-semiconductor devices. In each case, the stray field from a magnetic element on the surface of the semiconductor gives rise to a different type of inhomogeneous magnetic profile at a near-surface two-dimensional electron gas (2DEG). We investigate how these different types of magnetic barriers influence the transport properties of the 2DEG. Implications for potential applications of hybrid devices for nanomagnetometry, magnetic field sensors and spin-injection devices are discussed.
Url:
DOI: 10.1016/S1386-9477(00)00103-X
Affiliations:
- Royaume-Uni, États-Unis
- Angleterre, Nottinghamshire, Yorkshire-et-Humber
- Leeds, Nottingham
- Université de Leeds, Université de Nottingham
Links toward previous steps (curation, corpus...)
Le document en format XML
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<front><div type="abstract" xml:lang="en">We have fabricated three different types of hybrid ferromagnet-semiconductor devices. In each case, the stray field from a magnetic element on the surface of the semiconductor gives rise to a different type of inhomogeneous magnetic profile at a near-surface two-dimensional electron gas (2DEG). We investigate how these different types of magnetic barriers influence the transport properties of the 2DEG. Implications for potential applications of hybrid devices for nanomagnetometry, magnetic field sensors and spin-injection devices are discussed.</div>
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